1998 Mar 17

8

Philips Semiconductors

Product specification

7 N-channel 80 m

Ω FET array

enhancement mode MOS transistors

PHN708

Fig.10 Source current as a function of source-drain

diode forward voltage; typical values.

handbook, halfpage

0

(1)

(2)

(3)

0.4

IS

(A)

VSD (V)

0.8

1.2

8

6

2

0

4

MDA793

Fig.11 Drain-source on-state resistance as a function

of gate-source voltage; typical values.

handbook, halfpage

10

0

24

VGS (V)

RDSon

(

Ω)

68

10

1

MDA794

(1)(2)

(4)(5)(6)(7)

(3)

(8)