| 전자부품 데이터시트 검색엔진 |
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TS820-600B 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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TS820-600B 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() isc Thyristors TS820-600B www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VTM On-state Voltage ITM= 16A -- -- 1.6 V IGT Gate-trigger Current VD= 12V, RL= 140Ω -- -- 0.2 mA VGT Gate-trigger Voltage VD= 12V, RL= 140Ω -- -- 0.8 V IH Holding Current IT= 50mA -- -- 5 mA dv/dt Critical Rate of Rise of Off-state Voltage VD= 0.67VDRM , Tj= 125℃ 5 -- -- V/us PACKAGE OUTLINE(Dimensions in mm) |
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