| 전자부품 데이터시트 검색엔진 |
|
IXFN180N10 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
IXFN180N10 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 3 page ![]() ISFM1173 eq IXFN180N10 N-Channel MOSFET Transistor www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0, ID= 3mA 100 - - V IDSS Zero Gate Voltage Drain Current VDS= 500V, VGS= 0 - - 100 uA IGSS Gate-Body Leakage Current VGS= ±20V,VDS= 0 - - ± 100 nA VGS(th) Gate Threshold Voltage VDS= VGS, ID= 8mA 2.0 - 4.0 V RDS(on) Drain-Source On-Resistance VGS= 10V, ID= 90A - - 8 mΩ VSD Diode Forward Voltage ISD= 100A, VGS= 0V - - 1.5 V PACKAGE OUTLINE (UNIT: MM) |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |