2SC5979 datasheet(1/2 Pages) ISC

부품명	2SC5979

상세설명	Silicon NPN Power Transistor

PDF	2 Pages

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제조업체	ISC [Inchange Semiconductor Company Limited]

홈페이지	http://www.iscsemi.cn

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Silicon NPN Power Transistor

2SC5979

www.iscsemi.com

1

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 100V(Min)

·

DC Current Gain-

: hFE= 250(Min)@ IC= 0.5A

APPLICATIONS

·

DC-DC converter,relay drivers,lamp drivers,motor

drivers, inverter

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

5

A

ICM

Collector Current-Peak

7.5

A

PC

Collector Power Dissipation

0.8

W

Collector Power Dissipation

@TC= 25℃

15

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

2

유사한 부품 번호 - 2SC5979

제조업체	부품명	데이터시트	상세설명
Sanyo Semicon Device	2SC5979	43Kb / 4P	NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications
Inchange Semiconductor ...	2SC5979	276Kb / 2P	Silicon NPN Power Transistor
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2SC5979 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

2SC5979 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited

유사한 부품 번호 - 2SC5979

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