FDV301N datasheet(1/7 Pages) EVVOSEMI

부품명	FDV301N

상세설명	MOSFET

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제조업체	EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]

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APPLICATIONS

DC/DC Converters

Load Switch for Portable Applications

G

S

D

Top View

2

3

SOT-23

1

Notes:

a. Package limited

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 125 °C/W.

e. Based on TC = 25 °C.

ABSOLUTE MAXIMUM RATINGS

TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

6a

A

TC = 70 °C

5.1

TA = 25 °C

5b, c

TA = 70 °C

4b, c

Pulsed Drain Current

IDM

20

Continuous Source-Drain Diode Current

TC = 25 °C

IS

1.75

TA = 25 °C

1.04b, c

Maximum Power Dissipation

TC = 25 °C

PD

2.1

W

TC = 70 °C

1.3

TA = 25 °C

1.25b, c

TA = 70 °C

0.8b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

≤ 5 s

RthJA

80

100

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

40

60

FDV301N

SOT–23

1. GATE

2. SOURCE

3. DRAIN

8

Rev:2023A2

1

FEATURES

VDS (V) = 20V

ID = 6 A (VGS = 10V)

RDS(ON)

28m (VGS = 4.5V)

RDS(ON)

42m (VGS = 2.5V)

RDS(ON)

50m (VGS = 1.8V)

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