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RBO08-40G 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 RBO08-40G
상세설명  REVERSED BATTERY AND OVERVOLTAGE PROTECTION
PDF  9 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

RBO08-40G 데이터시트(HTML) 3 Page - STMicroelectronics

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RBO08-40G / RBO08-40T
3/9
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
VF13
IF =8A
RBO08-40G
1.5
V
RBO08-40T
1.7
V
IF =8A@Tamb = 25°C
1.45
V
VF13
IF =4A
RBO08-40G
1.3
V
RBO08-40T
1.35
V
IF =4A@Tamb = 25°C
1.2
V
VF13
IF =1A
1.1
V
IF =1A@Tamb = 25°C
1.0
V
IF =1A@Tj= 85°C
0.9
V
ELECTRICAL CHARACTERISTICS : DIODE D1 (- 40°C < Tamb < + 85°C)
Symbol
Parameter
VRM31/VRM32
Stand-off voltage Transil T1 / Transil T2.
VBR31/VBR32
Breakdown voltage Transil T1 / Transil T2.
IR31/IR32
Leakage current Transil T1 / Transil T2.
VCL31/VCL32
Clamping voltage Transil T1 / Transil T2.
VF13
Forward voltage drop Diode D1.
IPP
Peak pulse current.
αT
Temperature coefficient of VBR.
C31/C32
Capacitance Transil T1 / Transil T2.
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
VBR 31
IR =1mA
22
35
V
VBR 31
IR = 1 mA, Tamb = 25°C
24
32
V
IRM 31
VRM =20V
50
µA
IRM 31
VRM =20V,Tamb = 25°C
10
µA
VCL 31
IPP = 15A, Tj initial = 25°C
10/1000µs
40
V
α T
Temperature coefficient of VBR
910
-4/°C
C 31
F = 1MHz
VR =0 V
1000
pF
ELECTRICAL CHARACTERISTICS : TRANSIL T1 (- 40°C < Tamb < + 85°C)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
VBR 32
IR =1mA
22
35
V
VBR 32
IR = 1 mA, Tamb = 25°C
24
32
V
IRM 32
VRM =20V
50
µA
IRM 32
VRM =20V,Tamb = 25°C
10
µA
VCL 32
IPP = 37.5 A
10/1000µs
40
V
α T
Temperature coefficient of VBR
8.5
10
-4/⊃
C
ELECTRICAL CHARACTERISTICS : TRANSIL T2 (- 40°C < Tamb < + 85°C)



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