MBM29PL65LM90TN datasheet(2/56 Pages) SPANSION

2 / 56 page

MBM29PL65LM-90/10

s FEATURES

• MirrorFlash MemoryTM*1

• 0.23

µµµµm Process Technology

• 4 M

× 16 bit configuration

• Single 3.0 V read, program and erase

• Standard 48-pin TSOP (1) (Package suffix : TN)

• Minimum 100,000 program/erase cycles

• High performance Page mode (4 words)

• Sector erase architecture (Sectors can be grouped in any given combination.)

32K word sectors

Any combination of sectors can be concurrently erased. Also supports full chip erase.

• HiddenROM Region

• Write Protect by WP pin

• Embedded EraseTM*2 Algorithms

• Embedded ProgramTM*2 Algorithms

•Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Automatic sleep mode

• Erase Suspend/Resume

•Low VCC write inhibit

• Sector Group Protection

• Extended Sector Group Protection

• Fast Program

• Temporary sector group unprotection

• In accordance with CFI (Common Flash Memory Interface)

*1 : MirrorFlashTM is a trademark of Fujitsu Limited.

*2 : Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.

MBM29PL65LM90TN 데이터시트(PDF) 2 Page - SPANSION