Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

ƒ ISD ≤ 7.3A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

‚ Starting TJ= 25°C, L = 9.8mH

RG = 25Ω, IAS =7.3A. (See Figure 12)

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

… Surface mounted on FR-4 board

† Rθ is measured at TJ approximately 90°C

Symbol

Parameter

Min

Typ Max Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

30

–––

–––

V

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

–––

0.034

–––

V/°C

–––

–––

12

–––

–––

17

VGS(th)

Gate Threshold Voltage

1.0

–––

3.0

V

gfs

Forward Transconductance

10

–––

–––

S

–––

–––

12

–––

–––

25

Gate-to-Source Forward Leakage

–––

–––

-100

Gate-to-Source Reverse Leakage

–––

–––

100

Qg

Total Gate Charge

–––

52

79

Qgs

Gate-to-Source Charge

–––

6.1

9.2

nC

Qgd

Gate-to-Drain ("Miller") Charge

–––

16

23

RG

Gate Resistance

–––

–––

3.7

Ω

td(on)

Turn-On Delay Time

–––

8.6

–––

tr

Rise Time

–––

50

–––

td(off)

Turn-Off Delay Time

–––

52

–––

ns

tf

Fall Time

–––

46

–––

Ciss

Input Capacitance

–––

1800

–––

Coss

Output Capacitance

–––

680

–––

Crss

Reverse Transfer Capacitance

–––

240

–––

Symbol

Parameter

Min. Typ. Max. Units

Continuous Source Current

(Body Diode)

A

Pulsed Source Current

(Body Diode)

Ù

VSD

Diode Forward Voltage

–––

–––

1.0

V

trr

Reverse Recovery Time

–––

74

110

ns

Qrr

Reverse Recovery Charge

–––

200

300

nC

ISM

–––

–––

58

IS

IDSS

Drain-to-Source Leakage Current

µA

IGSS

pF

3.1

–––

–––

nA

Ω

VGS = 4.5V, ID = 3.7A f

Static Drain-to-Source On-Resistance

VGS = 10V, ID = 7.3A f

RDS(on)

VDS = VGS, ID = 250µA

VDS = 30V, VGS = 0V

VDS = 24V, VGS = 0V, TJ = 125°C

MOSFET symbol

VDS = 10V, ID = 3.7A

ID = 7.3A

VDS = 24V

Conditions

RG = 2.0Ω, See Fig. 10

f

VGS = 0V

RG = 6.2 Ω

VDS = 25V

ƒ = 1.0MHz, See Fig. 5

TJ = 25°C, IS = 7.3A, VGS = 0V e

TJ = 25°C, IF = 7.3A

di/dt = 100A/µs

e

showing the

integral reverse

p-n junction diode.

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Source-Drain Ratings and Characteristics

VGS = 10V, See Fig. 6 and 9

f

VDD = 15V

ID = 7.3A

VGS = -20V

VGS = 20V

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

IRF7413

Rev:2023A2

2

m