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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRF7424TR 데이터시트(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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IRF7424TR 데이터시트(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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1 / 9 page  Parameter Max. Units VDS Drain- Source Voltage -30 V ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -11 ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -9.3 A IDM Pulsed Drain Current -47 PD @TA = 25°C Power Dissipation 2.5 PD @TA = 70°C Power Dissipation 1.6 Linear Derating Factor 20 mW/°C VGS Gate-to-Source Voltage ± 20 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C Description Parameter Max. Units RθJA Maximum Junction-to-Ambient 50 °C/W Thermal Resistance Absolute Maximum Ratings W Top View 8 1 2 3 4 5 6 7 D D D G S A D S S VDSS RDS(on) max (mW) ID -30V 13.5@VGS = -10V -11A 22@VGS = -4.5V -8.8A Rev:2023A2 1 The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique s P-Channel 30 V (D-S) MOSFET IRF7424 |
유사한 부품 번호 - IRF7424TR |
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유사한 설명 - IRF7424TR |
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