PMBTH10 datasheet(2/7 Pages) PHILIPS

2 / 7 page

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 1 GHz general purpose switching transistor

PMBTH10

FEATURES

• Low cost

• High power gain.

DESCRIPTION

The PMBTH10 is a general purpose

silicon npn transistor, encapsulated in

a SOT23 plastic envelope. Its pnp

complement is the PMBTH81.

PINNING

DESCRIPTION

Code: V30

base

emitter

collector

Fig.1 SOT23.

fpage

MSB003

Top view

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector tab.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

Ptot

total power dissipation

Ts =45 °C (note 1)

−

400

hFE

DC current gain

VCE = 10 V; IC = 4 mA

−

Cre

collector-emitter feedback

capacitance

VCB = 10 V; IE = 0; f = 1 MHz

−

0.7

Crb

collector-base feedback

capacitance

VCB = 10 V; IE = 0; f = 1 MHz

0.35

0.65

transition frequency

VCE = 10 V; IC = 4 mA;

f = 100 MHz; Tamb =25 °C

650

−

MHz

rbCc

collector-base time constant

VCE = 10 V; IC = 4 mA;

f = 100 MHz; Tamb =25 °C

−

9ps

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

DC collector current

−

Ptot

total power dissipation

Ts =45 °C (note 1)

−

400

Tstg

storage temperature

−65

150

°C

junction temperature

−

150

°C

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