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IXFX64N60P3 데이터시트(PDF) 3 Page - Inchange Semiconductor Company Limited |
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IXFX64N60P3 데이터시트(HTML) 3 Page - Inchange Semiconductor Company Limited |
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3 / 8 page ![]() isc N-Channel MOSFET Transistor IXFX64N60P3 www.iscsemi.com 3 DRAIN - SOURCE BODY DIODE CHARACTERISTICS TYPICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT ISD Continuous Source Current Tc = 25 ºC - - 64 A ISM Pulsed Source Current - - 150 VSD Diode Forward Voltage ISD= 64A, VGS= 0V - - 1.5 V trr Reverse Recovery Time VDD = 100V, IF = 50A, diF/dt = 100A /μs - 140 - ns Qrr Reverse Recovery Charge - 0.6 - uC |
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