PMSTA92 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Jun 01

Philips Semiconductors

Product speciﬁcation

PNP high-voltage transistors

PMSTA92; PMSTA93

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

625

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

PMSTA92

IE = 0; VCB = −200 V

−−250

PMSTA93

IE = 0; VCB = −160 V

−−250

IEBO

emitter cut-off current

IC = 0; VEB = −3V

−−100

hFE

DC current gain

VCE = −10 V

IC = −1mA

−

IC = −10 mA

−

IC = −30 mA

−

VCEsat

collector-emitter saturation voltage

IC = −20 mA; IB = −2mA

−−500

VBEsat

base-emitter saturation voltage

IC = −20 mA; IB = −2mA

−−900

collector capacitance

IE =ie = 0; VCB = −20 V; f = 1 MHz

PMSTA92

−

6pF

PMSTA93

−

8pF

transition frequency

IC = −10 mA; VCE = −20 V; f = 100 MHz 50

−

MHz

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