| 전자부품 데이터시트 검색엔진 |
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IPB010N06N 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IPB010N06N 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() ISF1187 eq IPB010N06N N-Channel MOSFET Transistor www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0, ID= 1mA 60 - - V IDSS Zero Gate Voltage Drain Current VDS= 60V, VGS= 0V - - 1 uA IGSS Gate-Body Leakage Current VGS= ±20V,VDS= 0 V - - ± 100 nA VGS(th) Gate Threshold Voltage VDS= VGS, ID= 0.28mA 2.1 - 3.3 V RDS(on) Drain-Source On-Resistance VGS= 10V, ID= 100A - - 1.0 mΩ VSD Diode Forward Voltage ISD= 100A, VGS= 0V - - 1.2 V PACKAGE OUTLINE |
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