| 전자부품 데이터시트 검색엔진 |
|
NTH4L080N120SC1 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
NTH4L080N120SC1 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 3 page ![]() ISCF8040 eq NTH4L080N120SC1 SiC N-Channel MOSFET www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0V, ID= 0.1mA 1200 -- -- V VGS(th) Gate Threshold Voltage VDS = 10V, ID =5mA 1.8 -- 4.3 V RDS(ON) Drain-Source On-stage Resistance VGS=20V, ID= 20A -- -- 0.1 Ω IGSS Gate Source Leakage Current VGS= -15/+25V, VDS= 0V -- -- ± 1 μA IDSS Zero Gate Voltage Drain Current VDS = 1200V, VGS = 0V -- -- 100 μA VSD Diode Forward Voltage ISD= 10A, VGS= -5V -- 3.7 -- V PACKAGE OUTLINE Dimensions in mm (1mm = 0.0394“) |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |