IRLML2803 datasheet(1/7 Pages) EVVOSEMI

부품명	IRLML2803

상세설명	MOSFET

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Description

Absolute Maximum Ratings

Parameter

Units

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V

IDM

Pulsed Drain Current

c

PD @TA = 25°C

Power Dissipation

mW

Linear Derating Factor

mW/°C

VGS

Gate-to-Source Voltage

V

EAS

Single Pulse Avalanche Energy

g

mJ

dv/dt

Peak diode Recovery dv/dt

d

V/ns

TJ ,TSTG

Junction and Storage Temperature Range

°C

Thermal Resistance

Parameter

Typ.

Max.

Units

RθJA

Maximum Junction-to-Ambient

f

–––

230

°C/W

3.9

A

5.0

540

4.3

±20

Max.

1.2

0.93

7.3

-55 to + 150

D

S

G

3

1

2

IRLML2803

8

Rev:2023A2

1

SOT–23

1. GATE

2. SOURCE

3. DRAIN

Generation VTechnology UltraLowOn- Resistance

Low Profile (<1.1mm)

Available in Tape and Reel

Fast Switching

Lead-Free

RoHS CompliantHalogen-Free

VDS (V) = 30V

RDS(ON)

250m

(VGS = 10V)

RDS(ON)

400m

(VGS = 4.5V)

Features

유사한 부품 번호 - IRLML2803

제조업체	부품명	데이터시트	상세설명
International Rectifier	IRLML2803	191Kb / 9P	Power MOSFET(Vdss=30V, Rds(on)=0.25ohm)
International Rectifier	IRLML2803	81Kb / 8P	HEXFET Power MOSFET
Guangdong Youtai Semico...	IRLML2803	449Kb / 7P	Generation VTechnology UltraLowOn- Resistance
International Rectifier	IRLML2803GPBF	247Kb / 8P	HEXFET Power MOSFET
International Rectifier	IRLML2803GPBF	230Kb / 8P	Generation V Technology, Ultra Low On-Resistance, N-Channel MOSFET

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IRLML2803 데이터시트(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

IRLML2803 데이터시트(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

유사한 부품 번호 - IRLML2803

유사한 설명 - IRLML2803

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