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A5M20TG042 데이터시트(PDF) 1 Page - NXP Semiconductors |
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A5M20TG042 데이터시트(HTML) 1 Page - NXP Semiconductors |
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1 / 21 page ![]() 1 General description The A5M20TG042 is a Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field-proven LDMOS and GaN integrated power amplifiers are designed for TDD and FDD 32T mMIMO systems. 2 Features and benefits • 3-stage module solution that includes a 2-stage LDMOS integrated circuit as a driver and a GaN final stage amplifier • Advanced high performance in-package Doherty • Fully matched (50 ohm input/output, DC blocked) • Reduced memory effects for improved linearized error vector magnitude • Simultaneous dual band operation (B3–B1/B66) 3 Typical performance Table 1. 1805–2200 MHz — Typical LTE performance Pout = 16 W Avg., VD1 + VD2 = 28 Vdc, VD3A = VD3B = 45 Vdc, 1 × 20 MHz LTE, input signal PAR = 8 dB @ 0.01% probability on CCDF. [1] Carrier center frequency Gain (dB) ACPR (dBc) PAE (%) 1815 MHz 47.7 –27.1 43.5 2000 MHz 49.1 –31.8 43.5 2190 MHz 48.3 –33.4 42.7 [1] All data measured with device soldered to NXP reference circuit. A5M20TG042 Airfast Power Amplifier Module Rev. 1 — 20 May 2024 Product data sheet |
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