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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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FDN308P 데이터시트(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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FDN308P 데이터시트(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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1 / 5 page  Applications Power management Load switch Battery protection D S G Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±12 V ID Drain Current – Continuous (Note 1a) –1.5 A – Pulsed –10 Maximum Power Dissipation (Note 1a) 0.5 PD (Note 1b) 0.46 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W SOT–23 1. GATE 2. SOURCE 3. DRAIN P-Channel 2.5 V (D-S) MOSFET FDN308 Rev:2023A2 1 Features VDS (V) = -20V RDS(ON) 100m (VGS = -4.5V) RDS(ON) 120m (VGS = -2.5V) |
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