Electrical Characteristics T

A

= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain–Source Breakdown Voltage

VGS = 0 V, ID = –250

µA

–30

V

∆BVDSS

∆T

J

Breakdown Voltage Temperature

Coefficient

ID = –250

µA, Referenced to 25°C

–22

mV/

°C

VDS = –24V,

VGS = 0 V

–1

µA

IDSS

Zero Gate Voltage Drain Current

VDS = –24V, VGS = 0 V, TJ=55

°C

–10

IGSSF

Gate–Body Leakage, Forward

VGS = 20 V,

VDS = 0 V

100

nA

IGSSR

Gate–Body Leakage, Reverse

VGS = –20 V,

VDS = 0 V

–100

nA

On Characteristics

(Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = –250

µA

–1

–1.9

–3

V

∆VGS(th)

∆T

J

Gate Threshold Voltage

Temperature Coefficient

ID = –250

µA, Referenced to 25°C

4

mV/

°C

RDS(on)

Static Drain–Source

On–Resistance

VGS = –10 V,

ID = –2 A

VGS= –4.5 V,

ID = –1.5A

63

100

80

125

m

Ω

ID(on)

On–State Drain Current

VGS = –10 V,

VDS = –5 V

–10

A

gFS

Forward Transconductance

VDS = –5 V,

ID = –2 A

5

S

Dynamic Characteristics

Ciss

Input Capacitance

298

pF

Coss

Output Capacitance

83

pF

Crss

Reverse Transfer Capacitance

VDS = –15 V,

V GS = 0 V,

f = 1.0 MHz

39

pF

Switching Characteristics (Note 2)

td(on)

Turn–On Delay Time

6

12

ns

tr

Turn–On Rise Time

13

23

ns

td(off)

Turn–Off Delay Time

11

20

ns

tf

Turn–Off Fall Time

VDD = –15 V,

ID = –1 A,

VGS = –10 V,

RGEN = 6

Ω

6

12

ns

Qg

Total Gate Charge

6.2

9

nC

Qgs

Gate–Source Charge

1

nC

Qgd

Gate–Drain Charge

VDS = –15V,

ID = –3.6 A,

VGS = –10 V

1.2

nC

Drain–Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain–Source Diode Forward Current

–0.42

A

VSD

Drain–Source Diode Forward

Voltage

VGS = 0 V,

IS = –0.42 A (Note 2)

–0.8

–1.2

V

Notes:

1.

RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 250

°C/W when mounted on a

0.02 in2 pad of 2 oz. copper.

b) 270°C/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2.

Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2.0%

Rev:2023A2

2

P-Channel 2.5 V (D-S) MOSFET

FDN336