Typical Characterisitics

02

468

0

1

2

3

4

5

Q

, GATE CHARGE (nC)

g

I = 2.2A

D

15V

V

= 5V

DS

10V

0.1

0.5

1

2

5

10

20

50

0.01

0.03

0.1

0.3

1

2

5

10

20

V

, DRAI N-SOURCE VOLTAGE (V)

DS

DC

1s

100ms

10s

1ms

RDS(ON)

LIMIT

V

= 4.5V

SINGLE PULSE

R

=250 °C/W

T = 25°C

GS

A

JA

10ms

0.0001

0.001

0.01

0.1

1

10

100 300

0

10

20

30

40

50

SINGLE PULSE TIME (SEC)

SINGLE PULSE

R

=270° C/W

T = 25°C

JA

A

Figure 10. Single Pulse Maximum Pow er

Dissipation.

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in note 1b.

Transient thermal response will change depending on the circuit board design.

0.1

0.2

0.5

1

2

5

10

20

20

50

100

200

500

1000

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Ciss

f=1MHz

V

= 0V

GS

Coss

Crss

Figure 8. Capacitance Characteristics.

Figure7. GateChargeCharacteristics.

Figure 9. Maximum Safe Operating Area.

0.0001

0.001

0.01

0.1

1

10

100

300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

R

(t) = r(t) * R

R

= 270 °C/W

Duty Cycle, D = t /t

1

2

JA

JA

JA

T - T

= P * R

(t)

JA

A

J

P(pk)

t1

t 2

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

4

FDN337N

Rev:2022A2