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PTB32003X 데이터시트(PDF) 4 Page - NXP Semiconductors |
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PTB32003X 데이터시트(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page ![]() 1997 Feb 18 4 Philips Semiconductors Product specification NPN microwave power transistors PTB32001X; PTB32003X; PTB32005X Fig.4 Power derating curve; PTB32005X. f > 1 MHz. handbook, halfpage −50 200 10 0 MLC093 5 0 50 100 150 Ptot (W) Tmb ( oC) THERMAL CHARACTERISTICS Note 1. See “Mounting recommendations in the General part of handbook SC19a”. SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting base Tj =75 °C PTB32001X 22 K/W PTB32003X 12 K/W PTB32005X 10.5 K/W Rth mb-h thermal resistance from mounting base to heatsink Tj =75 °C; note 1 0.7 K/W |
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