5.4 Thermal Information

THERMAL METRIC(1)

ISO674x-Q1

ISO6742-Q1

UNIT

DW (SOIC)

DWW (SOIC)

16 PINS

16 PINS

RθJA

Junction-to-ambient thermal resistance

73

56.5

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

36.1

22

°C/W

RθJB

Junction-to-board thermal resistance

40.4

31

°C/W

ψJT

Junction-to-top characterization parameter

17

4.7

°C/W

ψJB

Junction-to-board characterization parameter

39.9

30.3

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

—

—

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

note.

5.5 Power Ratings

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

ISO6740

PD

Maximum power dissipation (both sides)

VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL =

15 pF, Input a 25-MHz 50% duty cycle

square wave

130.9

mW

PD1

Maximum power dissipation (side-1)

33

mW

PD2

Maximum power dissipation (side-2)

97.9

mW

ISO6741

PD

Maximum power dissipation (both sides)

VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL =

15 pF, Input a 25-MHz 50% duty cycle

square wave

134.9

mW

PD1

Maximum power dissipation (side-1)

50.8

mW

PD2

Maximum power dissipation (side-2)

84.1

mW

ISO6742

PD

Maximum power dissipation (both sides)

VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL =

15 pF, Input a 25-MHz 50% duty cycle

square wave

137.5

mW

PD1

Maximum power dissipation (side-1)

68.75

mW

PD2

Maximum power dissipation (side-2)

68.75

mW

ISO6740-Q1, ISO6741-Q1, ISO6742-Q1

SLLSFG4F – DECEMBER 2019 – REVISED JUNE 2024

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