Features

Absolute Maximum Ratings T

A = 25

oC unless other wise noted

Symbol

FDV303

Parameter

N

Units

V

DSS

Drain-Source Voltage, Power Supply Voltage

25

V

V

GSS

Gate-Source Voltage, V

IN

8

V

I

D

Drain/Output Current

0.68

- Continuous

A

- Pulsed

2

Maximum

P

D

Power Dissipation

0.35

W

T

J,TSTG

Operating and Storage Temperature Range

-55 to 150

°C

ESD

Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

6.0

kV

THERMAL CHARACTERISTICS

RθJA

Thermal Resistance, Junction-to-Ambient

357

°C/W

General Description

This very high density process is tailored to minimize on-state

resistance at low gate drive conditions. This device is desig-

ned especially for application in battery circuits using either one

lithium or three cadmium or NMH cells. It can be used as an in-

verter

or

for

high-efficiency

miniature

discrete

DC/DC

conversion in compact portable electronic devices like cellular

phones and pagers. This device has excellent on-state

resistance even at gate drive voltages as low as 2.5 volts.

D

G

S

N-Channel 25 V (D-S) MOSFET

FDV303

Rev:2023A2

1

SOT–23

1. GATE

2. SOURCE

3. DRAIN

l VDS (V) = 25V

l I D= 2A

28m

(VGS = 4.5V)

42m

(VGS

l

RDS(ON)

l

RDS(ON)

= 2.7V)

l Very low level gate drive requirements allowing direct

operation in 3V circuits. V

GS(th) < 1V.

l Gate-Source Zener for ESD ruggedness.>6kV

Human Body Model

l Compact industry standard SOT-23 surface mount package.