OXCFU950 datasheet(13/74 Pages) OXFORD

13 / 74 page

DS-0023 February 2007

External—Free Release

Page 13 of 74

OXCFU950 DATA SHEET

OXFORD SEMICONDUCTOR, INC.

symbol

description

values

Pad type

I—input pad

O—output pad

T—Tri-state output pad

B—Bidirectional pad

A—Analogue pad

P—Power pad

Logic type

C—cmos

T—TTL

Operating voltage

33—3V3

18—1V8

00—0 V (i.e. VSS Ground)

Tolerant input voltage level

5—5 V

N—same as operating voltage

Input type

N—normal

S—Schmitt

Output drive strength

1—x1 drive strength

2—x2 drive strength

3—x3 drive strength

Pull up/down resistor

U—pull up resistor

D—pull down resistor

Table 3: Pad Type Syntax Symbol Descriptions

Note 2 : PC Card/CompactFlash Power Domain Group

•

This group of signals is in the PC Card/CompactFlash power domain group.

•

Supply voltage range is specified from 2.85 V to 3.6 V.

•

This is also the internally connected supply to the internal regulator. Hence pin #28 should be connected to the PC

Card/CompactFlash supply source.

Note 3 : Modem Power Domain Group

•

This group of I/O signals is in the MODEM power domain group.

•

Supply voltage range is specified from 1.8 V to 3.6 V.

Note 4 : Analogue Power Domain Group

•

This group of I/O signals is in the analogue power domain group (which supplies the oscillator and PLL).

Note 5 : USB Power Domain Group

•

This group signals is in the USB power domain group.

•

Supply voltage range is specified from 2.85 V to 3.6 V.

4.1

Power Supply Filtering

4.1.1

PLL Supply De-Coupling

The low frequency noise at the Vdd and Gnd supplies is automatically corrected by the PLL control loop. However, where noise

frequency exceeds the loop bandwidth (60 to 100kHz) the noise is partially converted into clock jitter.

The conversion of supply noise into long-term clock jitter is important above 700 kHz. Oxford Semiconductor recommends you to

filter Vdd in this range efficiently.

For full-speed USB applications, where the jitter must not exceed 0.5 ns peak for a time duration approximately 1.2 µs, Oxford

Semiconductor recommends you to ensure that the noise level above 700kHz is lower than 7mV rms.

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