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K817P.. 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 K817P..
상세설명  Optocoupler, Phototransistor Output
PDF  8 Pages
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

K817P.. 데이터시트(HTML) 2 Page - Vishay Siliconix

  K817P.. Datasheet HTML 1Page - Vishay Siliconix K817P.. Datasheet HTML 2Page - Vishay Siliconix K817P.. Datasheet HTML 3Page - Vishay Siliconix K817P.. Datasheet HTML 4Page - Vishay Siliconix K817P.. Datasheet HTML 5Page - Vishay Siliconix K817P.. Datasheet HTML 6Page - Vishay Siliconix K817P.. Datasheet HTML 7Page - Vishay Siliconix K817P.. Datasheet HTML 8Page - Vishay Siliconix  
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Alternative Device Available
K817P
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 23-May-13
2
Document Number: 83522
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to wave profile for soldering conditions for through hole devices.
Fig. 1 - Absolute Maximum Output Power and Input Current vs. Ambient Temperature
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
COUPLER
AC isolation test voltage (RMS)
t = 1 s
VISO
5000
VRMS
Total power dissipation
Ptot
200
mW
Operating ambient temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 55 to + 125
°C
Soldering temperature (1)
2 mm from case, t
 10 s
Tsld
260
°C
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 50 mA
VF
1.25
1.6
V
Junction capacitance
VR = 0 V, f = 1 MHz
Cj
50
pF
OUTPUT
Collector emitter voltage
IC = 100 μA
VCEO
70
V
Emitter collector voltage
IE = 100 μA
VECO
7V
Collector dark current
VCE = 20 V, IF = 0, E = 0
ICEO
10
100
nA
COUPLER
Collector emitter saturation voltage
IF = 10 mA, IC = 1 mA
VCEsat
0.3
V
Cut-off frequency
IF = 10 mA, VCE = 5 V,
RL = 100 
fc
110
kHz
Coupling capacitance
f = 1 MHz
Ck
0.6
pF
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
0
10
20
30
40
50
60
70
80
0
20
40
60
80
100
120
Ambient Temperature (
°C)



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