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BAS316 데이터시트(PDF) 2 Page - NXP Semiconductors |
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BAS316 데이터시트(HTML) 2 Page - NXP Semiconductors |
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2 / 9 page ![]() 2004 Feb 04 2 Philips Semiconductors Product specification High-speed diode BAS316 FEATURES • Very small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 100 V • Repetitive peak reverse voltage: max. 100 V • Repetitive peak forward current: max. 500 mA. APPLICATIONS • High-speed switching in e.g. surface mounted circuits. DESCRIPTION The BAS316 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD323 SMD plastic package. PINNING PIN DESCRIPTION 1 cathode 2 anode Fig.1 Simplified outline (SOD323) and symbol. Marking code: A6. Cathode side indicated by a bar. handbook, halfpage MAM157 ka ORDERING INFORMATION LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Ts is the temperature at the soldering point of the cathode tab. TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION BAS316 − plastic surface mounted package; 2 leads SOD323 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 100 V VR continuous reverse voltage − 100 V IF continuous forward current Ts =90 °C; note 1; see Fig.2 − 250 mA IFRM repetitive peak forward current − 500 mA IFSM non-repetitive peak forward current square wave; Tj =25 °C prior to surge; see Fig.4 t=1 µs − 4A t=1ms − 1A t=1s − 0.5 A Ptot total power dissipation Ts =90 °C; note 1 − 400 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C |
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