2002 Sep 02

2

Philips Semiconductors

Product specification

Schottky barrier double diode

BAT74V

FEATURES

• Low forward voltage

• Low capacitance

• Ultra small SMD plastic package

• Flat leads: excellent coplanarity and improved thermal

behaviour.

APPLICATIONS

• Ultra high-speed switching

• Voltage clamping

• Line termination

• Inverse polarity protection.

DESCRIPTION

Planar Schottky barrier double diode with an integrated

guard ring for stress protection.

Two separate dies encapsulated in a SOT666 ultra small

SMD plastic package.

PINNING

PIN

DESCRIPTION

1

anode 1

2

not connected

3

cathode 2

4

anode 2

5

not connected

6

cathode 1

handbook, halfpage

12

3

4

6

5

Top view

MAM461

64

3

1

Fig.1 Simplified outline (SOT666) and symbol.

Marking code: 74.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous reverse voltage

−

30

V

continuous forward current

−

200

mA

repetitive peak forward current

−

300

mA

non-repetitive peak forward current

600

mA

total power dissipation

−

230

mW

storage temperature

−65

+150

°C

junction temperature

−

125

°C

operating ambient temperature

−65

+125

°C