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APT5016BLL 데이터시트(PDF) 4 Page - Advanced Power Technology

부품명 APT5016BLL
상세설명  POWER MOS 7 MOSFET
PDF  5 Pages
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제조업체  ADPOW [Advanced Power Technology]
홈페이지  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT5016BLL 데이터시트(HTML) 4 Page - Advanced Power Technology

  APT5016BLL Datasheet HTML 1Page - Advanced Power Technology APT5016BLL Datasheet HTML 2Page - Advanced Power Technology APT5016BLL Datasheet HTML 3Page - Advanced Power Technology APT5016BLL Datasheet HTML 4Page - Advanced Power Technology APT5016BLL Datasheet HTML 5Page - Advanced Power Technology  
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VDS=250V
VDS=100V
VDS=400V
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
5
10
50
100
500
0
10
20
30
40
50
0
10
20
30
40
50 60
70 80
90 100
0.3
0.5
0.7
0.9
1.1
1.3
1.5
120
10
1
16
14
12
10
8
6
4
2
0
10,000
5,000
1,000
100
10
200
100
50
10
5
1
TJ =+150°C
TJ =+25°C
Coss
Ciss
APT5016BLL - SLL
Crss
TC=+25°C
TJ =+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
10mS
1mS
100µS
Typical Performance Curves
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 333V
R
G
= 5
Ω
T
J
= 125°C
L = 100µH
Eon
Eoff
tr
tf
0
10
20
30
40
50
0
10
20
30
40
50
0
10
203040
50
0
5
10
15
20
25
30
35 40
45
50
V
DD
= 333V
I
D
= 30A
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
td(on)
td(off)
Eon
Eoff
60
50
40
30
20
10
0
1000
800
600
400
200
0
V
DD
= 333V
R
G
= 5
Ω
T
J
= 125°C
L = 100µH
V
DD
= 333V
R
G
= 5
Ω
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
60
50
40
30
20
10
0
1200
1000
800
600
400
200
0
I
D
= 30



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