Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Features:

• Rugged Construction with Polysilicon Gate Cell

• Excellent High Temperature Stability

• Very Fast Switching Speed

• Fast Recovery and Superior dV/dt Performance

• Increased Reverse Energy Capability

• Low Input and Transfer Capacitance for Easy Paralleling

• Hermetically Sealed Surface Mount Power Package

• TX, TXV, Space Level Screening Available

• Replacement for IXTH24N50 Types

SFF24N50/3

SFF24N50/3T

24 AMP / 500 Volts

0.2

Ω

N-Channel

Power MOSFET

TO-3

Maximum Ratings

Symbol

Value

Units

Drain – Source Voltage

500

Volts

Gate – Source Voltage

±20

Volts

Continuous Drain Current (Tj limited)

24

Amps

Avalanche Current

Repetitive

21

Amps

Avalanche Energy

Repetitive

Single Pulse

1

690

mJ

Operating & Storage Temperature

Top & Tstg

-55 to +150

ºC

Thermal Resistance, Junction to Case

0.75

(typ 0.6)

ºC/W

Total Device Dissipation @ TC=25ºC

Total Device Dissipation @ TC=55ºC

PD

167

126

WATTS

Package Outline: TO-3

Pin Out:

Pin 1: GATE

Pin 2: SOURCE

Pin 3: DRAIN

Notes:

1.

P/N: SFF 24N50/3:

Pin Diameter : 0.043”

0.038”

2.

P/N: SFF24N50/3T:

Pin Diameter: 0.063”

0.058”

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00175E

DOC

1.197

1.177

Ø.875

MAX

2x

.043

.038

.675

.655

.525 MAX

.135 MAX

.440

.420

2x

.225

.205

.450

.250

2x .312 MIN

2x Ø.165

.151

2x R.188 MAX

SEATING PLANE

2

1