2 / 8 page
4-2
RF2373
Rev A5 060907
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +6.0
VDC
Bias Voltage, VBIAS
<VCC
VDC
Input RF Level
+15 (see note)
dBm
Current Drain, ICC
32
mA
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
NOTE: Exceeding any one or a combination of the above maximum rating
limits may cause permanent damage. Input RF transients to +15dBm will
not harm the device. For sustained operation at inputs >+10dBm, a small
dropping resistor of 10
Ω is recommended in series with the V
CC.
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
25°C, VCC=3.3V, at typical frequencies
unless otherwise specified
Supply Voltage (VCC)
2.7
3.3
5.0
V
Bias Voltage (VBIAS)
2.7
3.3
5.0
V
RF Frequency Range
800 to 2500
MHz
Power Down Current
10
μAV
BIAS =0 V
Isolation
23
dB
Current Drain
(LNA)
8
14
19
mA
(Driver)
12
18
23
mA
IP2
55
dBm
Cellular Low Noise
Amplifier
Frequency
820
880
960
MHz
Gain
19.5
21.5
23.5
dB
ICC=10mA
Noise Figure
1.1
1.3
dB
IIP3
-3
-1
dBm
IP1dB
-13
-11
dBm
Input VSWR
2.0
2.5
Output VSWR
4.0
4.5
GPS Low Noise Amplifier
Frequency
1575
MHz
Gain
17.0
19.0
21.0
dB
ICC=10mA
Noise Figure
1.1
1.3
dB
IIP3
3
5
dBm
IP1dB
-7
-5
dBm
Input VSWR
1.7
2.2
Output VSWR
1.6
2.1
PCS Low Noise Amplifier
Frequency Range
1850
1920
1990
MHz
Gain
16.0
18.0
20.0
dB
ICC=10mA
Noise Figure
1.2
1.4
dB
IIP3
4
6
dBm
IP1dB
-7
-5
dBm
Input VSWR
1.8
2.3
Output VSWR
1.6
2.1
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Korean ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
