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SDR3KHFSMS 데이터시트(PDF) 1 Page - Solid States Devices, Inc |
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SDR3KHFSMS 데이터시트(HTML) 1 Page - Solid States Devices, Inc |
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1 / 2 page ![]() Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Features: • Hyper Fast Recovery: 35 nsec maximum • PIV to 1200 Volts • Hermetically Sealed • Void Free Construction • For High Efficiency Applications • Single Chip Construction • Low Reverse Leakage • TX, TXV, S Level screening Available SDR3KHF & SDR3KHFSMS thru SDR3NHF & SDR3NHFSMS 3 AMP 800 - 1200 V 35 nsec Hyper Fast Rectifier Axial Lead Diode SMS Maximum Ratings Symbol Value Units Peak Repetitive Reverse and DC Blocking Voltage SDR3KHF SDR3MHF SDR3NHF VRRM VRSM VR 800 1000 1200 Volts Average Rectified Forward Current (Resistive Load, 60 hz Sine Wave, TA = 25 °C) Io 3.0 Amps Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25 °C) IFSM 70 Amps Operating & Storage Temperature TOP & TSTG -65 to +175 ºC Maximum Thermal Resistance Junction to Leads, L = 3/8 Junction to Tabs R?JE 20 14 ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0097A DOC |
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