SP3222EB datasheet(2/25 Pages) SIPEX

2 / 25 page

Date:11/02/05

SP3222EB/SP3232EB True +3.0V to +5.5V RS-232 Transceivers

Date:02/27/05

SP3222EB/3232EB True +3.0 to +5.5V RS-232 Transceivers

NOTE 1: V+ and V- can have maximum magnitudes of 7V, but their absolute difference cannot exceed 13V.

NOTE 2: Driver Input hysteresis is typically 250mV.

ABSOLUTE MAXIMUM RATINGS

These are stress ratings only and functional

operation of the device at these ratings or any other

above those indicated in the operation sections of

the specifications below is not implied. Exposure to

absolute maximum rating conditions for extended

periods of time may affect reliability and cause

permanent damage to the device.

CC ...................................................... -0.3V to +6.0V

V+ (NOTE 1) ...................................... -0.3V to +7.0V

V- (NOTE 1) ....................................... +0.3V to -7.0V

V+ + |V-| (NOTE 1) ........................................... +13V

CC (DC VCC or GND current) ......................... ±100mA

Input Voltages

TxIN, EN ............................................ -0.3V to +6.0V

RxIN .................................................................. ±25V

Output Voltages

TxOUT ........................................................... ±13.2V

RxOUT ..................................... -0.3V to (V

CC + 0.3V)

Short-Circuit Duration

TxOUT .................................................... Continuous

Storage Temperature ...................... -65°C to +150°C

Power Dissipation Per Package

20-pin SSOP (derate 9.25mW/oC above +70oC) ........ 750mW

18-pin PDIP (derate 15.2mW/oC above +70oC) ....... 1220mW

18-pin SOIC (derate 15.7mW/oC above +70oC) ....... 1260mW

20-pin TSSOP (derate 11.1mW/oC above +70oC) ...... 890mW

16-pin SSOP (derate 9.69mW/oC above +70oC) ........ 775mW

16-pin PDIP (derate 14.3mW/oC above +70oC) ....... 1150mW

16-pin Wide SOIC (derate 11.2mW/oC above +70oC) .... 900mW

16-pin TSSOP (derate 10.5mW/oC above +70oC) ...... 850mW

16-pin nSOIC (derate 13.57mW/°C above +70°C) ...... 1086mW

Unless otherwise noted, the following specifications apply for VCC = +3.0V to +5.5V with TAMB = TMIN to TMAX, C1 to

C4=0.1µF

PARAMETER

MIN.

TYP.

MAX.

UNITS CONDITIONS

DC CHARACTERISTICS

Supply Current

0.3

1.0

no load, TAMB = +25°C, VCC = 3.3V,

TxIN = VCC or GND

Shutdown Supply Current

1.0

SHDN = GND, TAMB = +25°C,

VCC = +3.3V, TxIN = VCC or GND

LOGIC INPUTS AND RECEIVER OUTPUTS

Input Logic Threshold LOW

GND

0.8

TxIN, EN, SHDN, Note 2

Input Logic Threshold HIGH

2.0

VCC

VCC = 3.3V, Note 2

2.4

VCC = 5.0V, Note 2

Input Leakage Current

0.01

1.0

TxIN, EN, SHDN, TAMB = +25°C,

VIN = 0V to VCC

Output Leakage Current

0.05

receivers disabled, VOUT = 0V to VCC

Output Voltage LOW

0.4

IOUT = 1.6mA

Output Voltage HIGH

VCC-0.6 VCC-0.1

IOUT = -1.0mA

DRIVER OUTPUTS

Output Voltage Swing

5.0

5.4

3k load to ground at all driver

outputs, TAMB = +25°C

Output Resistance

300

VCC = V+ = V- = 0V, TOUT = +2V

Output Short-Circuit Current

VOUT = 0V

Output Leakage Current

VOUT = ±12V,VCC= 0V,

or 3.0V to 5.5V, drivers disabled

ELECTRICAL CHARACTERISTICS

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