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4-538
RF3220
Rev A1 050822
Absolute Maximum Ratings
Parameter
Rating
Unit
RF Input Power
+20
dBm
Device Voltage
-0.5 to +6.0
V
Device Current
250
mA
Operating Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
VCC=5V, RFIN=-10dBm, Freq=1850MHz,
with Temp=25°C unless otherwise noted.
AC Specifications
Frequency
500
2000
MHz
Gain
12
14.2
15.5
dB
Input VSWR
1.2
1.5
SWR
Output VSWR
1.7
2.0
SWR
Reverse Isolation
20
23
Output IP3
36
40
dBm
F1= 1850MHz, F2=1851MHz
Output P1dB
23
+25.5
dBm
Noise Figure
2.9
3.3
dB
Thermal
ICC=160mA, PDISS=0.997W. (See Note.)
ThetaJC
76
°C/W
Maximum Measured Junction
Temperature at DC Bias Con-
ditions
153
°C
TCASE=+85°C
Mean Time To Failures
5800
years
TCASE=+85°C
DC Specifications
Device Voltage
4.5
5.0
5.5
V
ICC=160mA
Operating Current Range
110
145
170
mA
VCC=5V
Note: The RF3220 must be operated at or below 175mA in order to achieve the thermal performance listed above. While the RF3220
may be operated at higher bias currents, 175mA is the recommended bias to ensure the highest possible reliability and electrical
performance.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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