SFS2327 datasheet(1/2 Pages) SSDI

부품명	SFS2327

상세설명	1.6 AMPS 200 - 400 VOLTS SILICON CONTROLLED RECTIFIER

PDF	2 Pages

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제조업체	SSDI [Solid States Devices, Inc]

홈페이지	http://www.ssdi-power.com

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1 / 2 page

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Designer’s Data Sheet

FEATURES:

• Low-Level Gate Characteristics

• IGT = 200 µA (Max) @ 25oC

• Low Holding Current IH = 1 mA (Max) @ 25oC

• Anode Common to Case

• Hermetically Sealed

SFS2326 thru SFS2329

1.6 AMPS

200 ─ 400 VOLTS

SILICON CONTROLLED

RECTIFIER

MAXIMUM RATINGS

Symbol

Value

Units

Peak Repetitive Reverse Voltage

and DC Blocking Voltage

SFS2326

SFS2327

SFS2328

SFS2329

VDRM

VRRM

200

250

300

400

Volts

Non-Repetitive Peak Reverse Blocking Voltage

(t < 5.0 ms)

SFS2326

SFS2327

SFS2328

SFS2329

VRSM

300

350

400

500

Volts

RMS On-State Current

(All Conduction Angles)

IT (RMS)

1.6

Amps

Peak Non-Repetitive Surge Current

(One Cycle, 60 Hz, TC = 80

oC )

ITSM

15

Amps

Peak Gate Power

PGM

0.1

Watts

Average Gate Power

PG (AV)

0.01

Watts

Peak Gate Current

IGM

0.1

Amps

Peak Gate Voltage

VGM

6.0

Volts

Operating Junction Temperature Range

TJ

-65 to +125

oC

Storage Temperature Range

Tstg

-65 to +150

oC

Thermal Resistance, Junction to Case

RθJC

30

oC/W

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: SCR004A

DOC

유사한 부품 번호 - SFS2327

제조업체	부품명	데이터시트	상세설명
Solid States Devices, I...	SFS2327	111Kb / 2P	SILICON CONTROLLED RECTIFIER

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Central Semiconductor C...	CS55B	125Kb / 2P	SILICON CONTROLLED RECTIFIER 0.8 AMPS, 200 AND 400 VOLTS
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Central Semiconductor C...	2N2322	138Kb / 2P	SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS
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SFS2327 데이터시트(PDF) 1 Page - Solid States Devices, Inc

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