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SPT6060/3 데이터시트(PDF) 2 Page - Solid States Devices, Inc

부품명 SPT6060/3
상세설명  20 AMP 350 VOLTS NPN DARLINGTON TRANSISTOR
PDF  2 Pages
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제조업체  SSDI [Solid States Devices, Inc]
홈페이지  http://www.ssdi-power.com
Logo SSDI - Solid States Devices, Inc

SPT6060/3 데이터시트(HTML) 2 Page - Solid States Devices, Inc

  SPT6060/3 Datasheet HTML 1Page - Solid States Devices, Inc SPT6060/3 Datasheet HTML 2Page - Solid States Devices, Inc  
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SOLID STATE DEVICES, INC.
SPT6060/3
VDC
300
-
VCEO(sus)
Collector-Emitter Sustaining Voltage
(IC = 2A, L = 2mH)
mADC
-
1.0
ICEO
Collector Cutoff Current
(VCE = Rated Value, TC = 25
oC)
mADC
-
300
IEBO
MIN
MAX
ELECTRICAL CHARACTERISTICS
SYMBOL
UNITS
mJ
Overload Short Circuit Rating
(VCEO(sus) = 300V, IC = 30A, IB = 300mA, Time = 10:s)
90
-
DC Current Gain*
(VCE = 5VDC)
30
20
15
1.4
1.5
2.0
Collector-Emitter Saturation Voltage*
VCE(SAT)
VDC
HFE
Base-Emitter Saturation Voltage*
2.5
3.0
VDC
VBE (SAT)
Small Signal Current Gain
(IC = 1ADC , VCE = 10VDC, f = 1MHz)
10
-
hFE
VCC = 150VDC , IC = 10ADC,
IB1 = IB2 = 1.0ADC,
tP = 4µs min.
Storage Time
*Pulse Test: Pulse Width = 300
µs, Duty Cycle = 2%
tf
1.0
µs
IC = 10ADC
IC = 15ADC
IC = 20ADC
-
-
120
80
60
-
Emitter Cutoff Current
(VEB = 4VDC, IC = 0)
IC = 10ADC, IB = 2ADC
IC = 10ADC, IB = 1ADC
IC = 20ADC, IB = 2ADC
IC = 10ADC, IB = 2ADC
IC = 20ADC, IB = 2ADC
Rise Time
Fall Time
tr
0.4
µs
-
ts
2.5
µs
-
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
Forward Bias Safe Operating Area
20
10
0.125
FBSOA
VCE = 6.25V, t = 1sec
VCE = 12.5V, t = 1sec
VCE = 300V, t = 1sec
-
-
-
A
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0017B



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