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SST25WF080B-40E/SN 데이터시트(PDF) 21 Page - Microchip Technology |
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SST25WF080B-40E/SN 데이터시트(HTML) 21 Page - Microchip Technology |
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21 / 44 page ![]() 2013-2022 Microchip Technology Inc. and its subsidiaries DS20005164H-page 21 SST25WF080B 6.0 ELECTRICAL SPECIFICATIONS Absolute Maximum Ratings (†) Temperature under bias ..........................................................................................................................-55°C to +125°C Storage temperature ...............................................................................................................................-55°C to +150°C DC voltage on any pin to ground potential...........................................................................................-0.5V to VDD+0.5V Transient voltage (<20 ns) on any pin to ground potential ...................................................................-2.0V to VDD+2.0V Package power dissipation capability (TA = 25°C)....................................................................................................1.0W Surface mount solder reflow temperature.......................................................................................260°C for 10 seconds Output short circuit current(1) ..................................................................................................................................50 mA 6.1 Power-Up Specifications All functionalities and DC specifications are specified for a VDD ramp rate of greater than 1V per 100 ms (0V to 1.8V in less than 180 ms). See Table 6-3 and Figure 6-1 for more information. † NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Note 1: Output shorted for no more than one second. No more than one output shorted at a time. TABLE 6-1: OPERATING RANGE Range Ambient Temp VDD Industrial -40°C to +85°C 1.65V - 1.95V Extended -40°C to +125°C 1.65V - 1.95V TABLE 6-2: AC CONDITIONS OF TEST Input Rise/Fall Time Output Load 5ns CL =30pF TABLE 6-3: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter Minimum Units TPU-READ VDD Min to Read Operation 500 µs TPU-WRITE(1) VDD Min to Write Operation 500 µs Note 1: This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. |
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