Product Specification

SL1 ICS31 01

Rev. 1.2

July 2000

Page 9 of 22

Public

6 Mechanical Die Specifications

Designation:

VCOL1V0

visible on each die

location see attached die plan

Bond pad location:

see attached die plan

Bond pad size:

LA, LB

130 µm x 150 µm

Test pad size:

TEST, VSS

90 µm x 90 µm (the test pads are electrically neutral

at sawn wafers)

Bond pad metallisation material:

AlSiCu

Metallisation thickness:

1.4 µm

1460 µm x 1490 µm

1380 µm x 1410 µm

Tolerances for sawn dies:

± 25 µm

Pin identification:

see attached die plan

Passivation attributes:

The passivation is a protection of active areas against dust (particles) and humidity and general

contamination (whole surface of the chip except for the bond pads).

Top side passivation material:

Oxynitride

Passivation thickness:

1.6 µm

Due to the glass-like physical properties careful handling and processing is required.