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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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LT1001AM 데이터시트(PDF) 3 Page - Linear Technology |
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LT1001AM 데이터시트(HTML) 3 Page - Linear Technology |
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3 / 16 page  3 LT1001 1001fb ELECTRICAL CHARACTERISTICS LT1001AM/883 LT1001M SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS VOS Input Offset Voltage q 30 60 45 160 µV ∆VOS Average Offset Voltage Drift q 0.2 0.6 0.3 1.0 µV/°C ∆Temp IOS Input Offset Current q 0.8 4.0 1.2 7.6 nA IB Input Bias Current q ±1.0 ±4.0 ±1.5 ±8.0 nA AVOL Large Signal Voltage Gain RL ≥ 2kΩ, VO = ±10V q 300 700 200 700 V/mV CMRR Common Mode Rejection Ratio VCM = ±13V q 110 122 106 120 dB PSRR Power Supply Rejection Ratio VS = ±3 to ±18V q 104 117 100 117 dB Input Voltage Range q ±13 ±14 ±13 ±14 V VOUT Output Voltage Swing RL ≥ 2kΩ q ±12.5 ±13.5 ±12.0 ±13.5 V Pd Power Dissipation No load q 55 90 60 100 mW VS = ±15V, – 55°C ≤ TA ≤ 125°C, unless otherwise noted LT1001AC LT1001C SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS VOS Input Offset Voltage q 20 60 30 110 µV ∆VOS Average Offset Voltage Drift q 0.2 0.6 0.3 1.0 µV/°C ∆Temp IOS Input Offset Current q 0.5 3.5 0.6 5.3 nA IB Input Bias Current q ±0.7 ±3.5 ±1.0 ±5.5 nA AVOL Large Signal Voltage Gain RL ≥ 2kΩ, VO = ±10V q 350 750 250 750 V/mV CMRR Common Mode Rejection Ratio VCM = ±13V q 110 124 106 123 dB PSRR Power Supply Rejection Ratio VS = ±3V to ±18V q 106 120 103 120 dB Input Voltage Range q ±13 ±14 ±13 ±14 V VOUT Output Voltage Swing RL ≥ 2kΩ q ±12.5 ±13.8 ±12.5 ±13.8 V Pd Power Dissipation No load q 50 85 55 90 mW Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Offset voltage for the LT1001AM/883 and LT1001AC are measured after power is applied and the device is fully warmed up. All other grades are measured with high speed test equipment, approximately 1 second after power is applied. The LT1001AM/883 receives 168 hr. burn-in at 125 °C. or equivalent. Note 3: This parameter is tested on a sample basis only. Note 4: Long Term Input Offset Voltage Stability refers to the averaged trend line of VOS versus Time over extended periods after the first 30 days of operation. Excluding the initial hour of operation, changes in VOS during the first 30 days are typically 2.5 µV. Note 5: Parameter is guaranteed by design. Note 6: 10Hz noise voltage density is sample tested on every lot. Devices 100% tested at 10Hz are available on request. VS = ±15V, 0°C ≤ TA ≤ 70°C, unless otherwise noted LT1001AM/883 LT1001AC LT1001M/LT1001C SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS Input Voltage Range ±13 ±14 ±13 ±14 V VOUT Maximum Output Voltage Swing RL ≥ 2kΩ±13 ±14 ±13 ±14 V RL ≥ 1kΩ±12 ±13.5 ±12 ±13.5 V SR Slew Rate RL ≥ 2kΩ (Note 5) 0.1 0.25 0.1 0.25 V/ µs GBW Gain-Bandwidth Product (Note 5) 0.4 0.8 0.4 0.8 MHz Pd Power Dissipation No load 46 75 48 80 mW No load, VS = ±3V 4 6 4 8 mW The q denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VS = ±15V, TA = 25°C, unless otherwise noted |
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