| 전자부품 데이터시트 검색엔진 |
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WSI05030E-R20M 데이터시트(PDF) 9 Page - AiT Semiconductor Inc. |
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WSI05030E-R20M 데이터시트(HTML) 9 Page - AiT Semiconductor Inc. |
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9 / 17 page ![]() AiT Semiconductor Inc. WSI www.ait-ic.com WIRE WOUND SMD INDUCTOR REV1.1 - 9 - Part Number Inductance (uH) DCR (mΩ) Typ. DCR (mΩ)Max. Isat (A) Max. Irms (A) Max. Dimension “D” (mm) Dimension “H” Ref. WSI10050J-R45M 0.45 0.90 1.10 29.00 36.00 3.0±0.5 4.0 Ref. WSI10050J-R56M 0.56 1.20 1.40 31.00 32.00 3.0±0.5 4.0 Ref. WSI10050J-1R0M 1.00 2.30 2.50 25.00 25.00 3.0±0.5 4.0 Ref. WSI10050J-1R2M 1.20 2.50 3.00 21.00 24.00 3.0±0.5 4.0 Ref. WSI10050J-2R2M 2.20 5.30 6.30 19.00 14.00 3.0±0.5 4.0 Ref. WSI10050J-4R7M 4.70 10.50 11.50 14.00 10.00 1.8±0.5 3.0 Ref. WSI10050J-6R8M 6.80 13.50 15.50 11.00 9.00 3.0±0.5 4.0 Ref. WSI10050J-100M 10.00 21.00 25.20 10.00 7.20 3.0±0.5 4.0 Ref. WSI10050J-150M 15.00 38.00 45.60 8.00 4.50 1.8±0.5 3.0 Ref. WSI10050J-220M 22.00 51.00 61.20 7.00 4.00 1.8±0.5 3.0 Ref. * Test Condition: @100KHz, 1.0Vrms, 25℃ Ambient * M=Tolerance=±20% * Irms: Rated Current Loading when temperature rise approximately 40℃. * Isat: Saturated Current measured at the point of L drop approximately 20% Part Number Inductance (uH) DCR (mΩ) Typ. DCR (mΩ)Max. Isat (A) Max. Irms (A) Max. WSI12050E-R10M 0.10 0.53 0.60 118.00 55.00 WSI12050E-R22M 0.22 0.64 0.80 110.00 51.00 WSI12050E-R33M 0.33 0.85 1.10 80.00 42.00 WSI12050E-R47M 0.47 1.10 1.30 65.00 38.00 WSI12050E-R56M 0.56 1.30 1.50 55.00 36.00 WSI12050E-R68M 0.68 1.50 1.70 54.00 34.00 WSI12050E-R82M 0.82 2.00 2.30 53.00 31.00 WSI12050E-1R0M 1.00 2.10 2.50 50.00 29.00 WSI12050E-1R2M 1.20 2.80 3.50 49.00 25.00 WSI12050E-1R5M 1.50 3.40 4.10 48.00 23.00 WSI12050E-1R8M 1.80 4.20 4.90 40.00 19.00 WSI12050E-2R2M 2.20 4.60 5.50 32.00 20.00 WSI12050E-3R3M 3.30 7.70 9.20 32.00 15.00 WSI12050E-4R7M 4.70 12.80 15.00 27.00 12.00 WSI12050E-5R6M 5.60 14.00 16.50 22.00 11.50 WSI12050E-6R8M 6.80 15.40 18.50 21.00 11.00 WSI12050E-7R8M 7.80 17.20 20.50 18.00 10.00 WSI12050E-8R2M 8.20 18.90 22.50 18.00 9.50 WSI12050E-100M 10.00 21.40 25.50 16.00 9.00 * Test Condition: @100KHz, 1.0Vrms, 25℃ Ambient * M=Tolerance=±20% * Irms: Rated Current Loading when temperature rise approximately 40℃. * Isat: Saturated Current measured at the point of L drop approximately 20% |
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