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APT6010JFLL 데이터시트(PDF) 2 Page - Microsemi Corporation

부품명 APT6010JFLL
상세설명  Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
PDF  5 Pages
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제조업체  MICROSEMI [Microsemi Corporation]
홈페이지  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT6010JFLL 데이터시트(HTML) 2 Page - Microsemi Corporation

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DYNAMIC CHARACTERISTICS
APT6010JFLL
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
D = 0.9
0.05
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -47A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -47A, di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -47A, di/dt = 100A/µs)
Peak Recovery Current
(IS = -47A, di/dt = 100A/µs)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
µC
Amps
MIN
TYP
MAX
47
188
1.3
15
Tj = 25°C
300
Tj = 125°C
600
Tj = 25°C
2.0
Tj = 125°C
6.8
Tj = 25°C
15
Tj = 125°C
27
Symbol
RθJC
VIsolation
MIN
TYP
MAX
0.24
2500
UNIT
°C/W
Volts
Characteristic
Junction to Case
RMS Volatage (50-60hHZ Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 300V
I
D = 47A @ 25°C
RESISTIVESWITCHING
V
GS = 15V
V
DD = 300V
I
D = 47A @ 25°C
R
G = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
V
DD = 400V, VGS = 15V
I
D = 47A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
V
DD = 400V VGS = 15V
I
D = 47A, RG = 5Ω
MIN
TYP
MAX
6710
1250
90
150
30
75
12
17
34
10
770
845
1000
1060
UNIT
pF
nC
ns
µJ
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.72mH, RG = 25Ω, Peak IL = 47A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -ID47A
di/dt ≤ 700A/µs V
R ≤ 600V
T
J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
Microsemi reserves the right to change, without notice, the specifications and inforation contained herein.



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