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APT6010JLL 데이터시트(PDF) 2 Page - Microsemi Corporation

부품명 APT6010JLL
상세설명  Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
PDF  5 Pages
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제조업체  MICROSEMI [Microsemi Corporation]
홈페이지  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT6010JLL 데이터시트(HTML) 2 Page - Microsemi Corporation

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DYNAMICCHARACTERISTICS
APT6010JLL
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
D = 0.9
0.05
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS = 0V, IS = -47A)
Reverse Recovery Time (I
S = -47A, dlS/dt = 100A/µs)
Reverse Recovery Charge (I
S = -47A, dlS/dt = 100A/µs)
Peak Diode Recovery dv/dt 5
UNIT
Amps
Volts
ns
µC
V/ns
MIN
TYP
MAX
47
188
1.3
790
17.9
8
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/dt
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 300V
I
D = 47A @ 25°C
RESISTIVESWITCHING
V
GS = 15V
V
DD = 300V
I
D = 47A @ 25°C
R
G = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
V
DD = 400V, VGS = 15V
I
D = 47A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
V
DD = 400V VGS = 15V
I
D = 47A, RG = 5Ω
MIN
TYP
MAX
6710
1250
90
150
30
75
12
17
34
10
770
845
1000
1060
UNIT
pF
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.72mH, RG = 25Ω, Peak IL = 47A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -ID47A
di/dt ≤ 700A/µs V
R ≤ 600V
T
J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
Microsemi reserves the right to change, without notice, the specifications and inforation contained herein.
Symbol
RθJC
VIsolation
MIN
TYP
MAX
0.24
2500
UNIT
°C/W
Volts
Characteristic
Junction to Case
RMS Volatage (50-60hHZ Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)



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