MAXIMUM RATINGS

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

UNIT

Volts

Amps

Ohms

µA

nA

Volts

MIN

TYP

MAX

600

40

0.130

50

500

±100

24

APT6013JVR

600

40

160

±30

±40

500

4

-55 to 150

300

30

30

1300

APT6013JVR

600V

40A

0.130

Ω

Ω

Ω

Ω

Ω

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 250µA)

DS

> I

D(on)

x R

DS(on)

Max, V

GS

= 10V)

GS

= 10V, 0.5 I

D[Cont.]

)

Zero Gate Voltage Drain Current (V

DS

= V

DSS

, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 0.8 V

DSS

, V

GS

= 0V, T

C

= 125°C)

Gate-Source Leakage Current (V

GS

= ±30V, V

DS

= 0V)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 1mA)

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

J

,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Pulsed Drain Current

1

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Repetitive Avalanche Energy

1

Single Pulse Avalanche Energy

4

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

G

D

S

mode power MOSFETs. This new technology minimizes the JFET effect,

also achieves faster switching speeds through optimized gate layout.

• Faster Switching

• 100% Avalanche Tested

• Lower Leakage

• Popular SOT-227 Package

SOT-227

G

S

S

D

"UL Recognized"

POWER MOS V

®

Microsemi Website - http://www.microsemi.com

Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with

two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.