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APT8014L2FLL 데이터시트(PDF) 4 Page - Microsemi Corporation

부품명 APT8014L2FLL
상세설명  Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
PDF  5 Pages
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제조업체  MICROSEMI [Microsemi Corporation]
홈페이지  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT8014L2FLL 데이터시트(HTML) 4 Page - Microsemi Corporation

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APT8014L2FLL(G)
Crss
Ciss
Coss
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
1
10
100
800
0
10
20
30
40
50
0
50
100 150 200 250 300 350 400
0.3
0.5
0.7
0.9
1.1
1.3
1.5
208
100
50
10
5
1
16
12
8
4
0
TC=+25°C
TJ=+150°C
SINGLE PULSE
10mS
1mS
100µS
TJ=+150°C
TJ=+25°C
VDS=400V
VDS=160V
VDS=640V
I
D = 52A
20,000
10,000
1,000
100
200
100
10
1
OPERATIONHERE
LIMITEDBYRDS(ON)
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 533V
R
G = 3Ω
T
J = 125°C
L = 100µH
Eon
Eoff
tr
tf
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
0
5
10 15 20 25 30 35 40 45 50
V
DD = 533V
I
D = 52A
T
J = 125°C
L = 100µH
E
ON includes
diode reverse recovery.
td(on)
td(off)
Eon
Eoff
160
140
120
100
80
60
40
20
0
3000
2500
2000
1500
1000
500
0
V
DD = 533V
R
G = 3Ω
T
J = 125°C
L = 100µH
V
DD = 533V
R
G = 3Ω
T
J = 125°C
L = 100µH
E
ON includes
diode reverse recovery.
140
120
100
80
60
40
20
0
12000
10000
8000
6000
4000
2000
0



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