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APT8018L2VR 데이터시트(PDF) 3 Page - Microsemi Corporation

부품명 APT8018L2VR
상세설명  Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
PDF  4 Pages
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제조업체  MICROSEMI [Microsemi Corporation]
홈페이지  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT8018L2VR 데이터시트(HTML) 3 Page - Microsemi Corporation

  APT8018L2VR_06 Datasheet HTML 1Page - Microsemi Corporation APT8018L2VR_06 Datasheet HTML 2Page - Microsemi Corporation APT8018L2VR_06 Datasheet HTML 3Page - Microsemi Corporation APT8018L2VR_06 Datasheet HTML 4Page - Microsemi Corporation  
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Typical Performance Curves
APT8018L2VR
4.5V
5V
5.5V
6V
VGS =15 &10V
4V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
0
20
40
60
80
100
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
120
100
80
60
40
20
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
120
100
80
60
40
20
0
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
NORMALIZED TO
V
GS = 10V @ 21.5A
0.0545
0.0957
0.0487F
0.922F
Power
(watts)
RC MODEL
Junction
temp. (
°C)
Case temperature. (
°C)
I
D = 21.5A
V
GS = 10V



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