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APT8020B2FLL 데이터시트(PDF) 3 Page - Microsemi Corporation

부품명 APT8020B2FLL
상세설명  Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
PDF  5 Pages
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제조업체  MICROSEMI [Microsemi Corporation]
홈페이지  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT8020B2FLL 데이터시트(HTML) 3 Page - Microsemi Corporation

  APT8020B2FLL Datasheet HTML 1Page - Microsemi Corporation APT8020B2FLL Datasheet HTML 2Page - Microsemi Corporation APT8020B2FLL Datasheet HTML 3Page - Microsemi Corporation APT8020B2FLL Datasheet HTML 4Page - Microsemi Corporation APT8020B2FLL Datasheet HTML 5Page - Microsemi Corporation  
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Typical Performance Curves
APT8020B2_LFLL
0
5
10
15
20
25
30
0
2
4
6
8
10
0
10
20
30
40
50
60
70
80
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
120
100
80
60
40
20
0
40
35
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
100
80
60
40
20
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
5.5V
6V
6.5V
7V
5V
VGS =15 &10 V
8V
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
I
D = 19A
V
GS = 10V
NORMALIZED TO
V
GS = 10V @ ID = 19A
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
0.0271
0.0656
0.0860
0.00899
0.0202
0.293
Dissipated Power
(Watts)
T
J (C)
T
C (C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.



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