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STG3155 데이터시트(PDF) 1 Page - STMicroelectronics |
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STG3155 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 18 page ![]() May 2007 Rev 2 1/18 18 Features ■ High speed: –tPD = 1.5ns (Typ.) at VCC = 3.0V –tPD = 1.5ns (Typ.) at VCC = 2.3V ■ Ultra low power dissipation: –ICC = 0.2µA (Max.) at TA = 85°C ■ Low "ON" resistance: –RON = 0.5Ω (TA = 25ºC) at VCC = 4.3V –RON = 0.6Ω (TA = 25ºC) at VCC = 3.0V –RON = 1.0Ω (TA = 25ºC) at VCC = 1.8V ■ Wide operating voltage range: –VCC (OPR) = 1.65V to 4.3V single supply ■ 4.3V Tolerant and 1.8V compatible threshold on digital control input at VCC = 2.3V to 3.0V ■ Latch-up performance exceeds 300mA (JESD 17) ■ ESD Performance (Analog Chan. Vs. GND): HMB >2kV (MIL STD 883 method 3015) Description The STG3155 is a high-speed CMOS low voltage single analog S.P.D.T. (Single Pole Dual Throw) switch or 2:1 Multiplexer /Demultiplexer switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.3V, making this device ideal for portable applications. The device offers very low ON-Resistance (<0.5 Ω) at V CC = 4.3V. The SEL inputs are provided to control the switch. The switch S1 is ON (they are connected to common Ports Dn) when the SEL input is held high and OFF (high impedance state exists between the two ports) when SEL is held low; the switch S2 is ON (it is connected to common Port D) when the SEL input is held low and OFF (high impedance state exists between the two ports) when SEL is held high. Additional key features are fast switching speed, break-before-make delay time and Ultra Low Power Consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage. DFN6L STG3155 Low voltage 0.5 Ω Max single SPDT switch with break-before-make feature www.st.com Table 1. Device summary Part number Package Packaging STG3155DTR DFN6L (1.45mm x 1mm) Tape and Reel |
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