Electrical Characteristics (TC=25

unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=250μA

150

V

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250μA

2.0

-

4.0

V

IDSS

Zero Gate Voltage Source Current

VDS=120V, VGS=0V

-

-

1

μA

TJ=85

--

30

μA

IGSS

Gate Leakage Current

VGS=±20V, VDS=0V

-

-

±100

nA

RDS(ON) a Drain-Source On-State Resistance

VGS=10V, ID=20A

-

13

16

VGS=6V, ID=10A

-

15

20

Diode Characteristics

VSD a

Diode Forward Voltage

ISD=20A, VGS=0V

-

-

1.3

V

trr

Reverse Recovery Time

IDS=20A, VGS=0V

dlSD/dt=100A/μs

-86

-

ns

Qrr

Reverse Recovery Charge

-

310

-

nC

Dynamic Characteristics b

Ciss

Input Capacitance

VGS=0V, VDS=75V

Frequency=1MHz

-

2881

-

pF

Coss

Output Capacitance

-

207

-

Crss

Reverse Transfer Capacitance

-

23

-

td(on)

Turn-on Delay Time

VDS=75V, VGEN=10V,

RG=45Ω, RL=3.75Ω,

IDS=20A

-15

-

ns

tr

Turn-on Rise Time

-

34

-

td(off)

Turn-off Delay Time

-

30

-

tf

Turn-off Fall Time

-

26

-

Gate Charge Characteristics b

Qg

Total Gate Charge

VDS =75V, VGS = 10 V,

IDS =20A

-

30.5

-

nC

Qgs

Gate-Source Charge

-

16.1

-

Qgd

Gate-Drain Charge

-

10.8

-

Notes:

a. Pulse test; pulse width

d 300Ps, duty cycle d 2%

b. Guaranteed by design, not subject to production testing