Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

VDS = 0 V, ID

V

Drain-Source Breakdown Voltage

DS

= - 250 µA

- 100

V

VGS(t

Gate Threshold Voltage

h)

VDS = VGS, ID = - 250 µA

- 2.

- 1

5

I

Gate-Body Leakage

GSS

VDS = 0 V, VGS = ± 20 V

± 250

nA

VDS = - 100 V, VGS = 0

I

Zero Gate Voltage Drain Current

DSS

V

- 1

VDS = - 100 V, VGS = 0 V, TJ = 12

µA

5 °C

- 50

VDS = - 100 V, VGS = 0 V, TJ = 150 °C

- 250

On-State Drain Currenta

VDS ≤ - 10 V, VGS =

ID(on)

- 10 V

- 15

A

Drain-Source On-State Resistancea

VGS = - 10 V, ID

RDS(on)

= - 3.6 A

0.100

Ω

VGS = - 4.5 V, ID = - 3.4 A

0.120

Forward Transconductancea

VDS = - 15 V, ID =

gfs

- 3.6 A

12

S

Dynamicb

C

Input Capacitance

iss

VGS = 0 V, VDS = - 50 V, f = 1 MHz

1055

C

pF

Output Capacitance

oss

65

Crs

Reverse Transfer Capacitance

s

41

Total Gate Chargec

VDS = - 50 V, VGS = - 10 V, ID = - 3.6

Qg

A

23.2

34.8

nC

VDS = - 50 V, VGS = - 4.5 V, ID = - 3.6 A

11.7

17.6

Gate-Source Chargec

Qgs

3.5

Gate-Drain Chargec

Qgd

4.8

R

Gate Resistance

g

f = 1 MHz

1.2

5.7

11.5

Ω

Turn-On Delay Timec

td(on)

71

VDD = - 50 V, RL = 17.2 Ω

ID ≅ - 2.9 A, VGEN = - 10 V, Rg = 1 Ω

4

Rise Time

ns

c

tr

12

18

Turn-Off Delay Timec

td(off)

33

50

Fall Timec

tf

918

Drain-Source Body Diode Ratings and Characteristics TC = 25 °C

b

I

Continuous Current

S

- 8.8

A

I

Pulsed Current

SM

- 15

Forward Voltagea

VSD

IF = - 2.9 A, VGS = 0 V

- 0.8

- 1.5

V

t

Reverse Recovery Time

rr

5

IF = - 2.9 A, dI/dt = 100 A/µs

0

75

ns

IRM(

Peak Reverse Recovery Current

REC)

- 4

- 6

A

Q

Reverse Recovery Charge

rr

14

98

7

nC

2

FS9532-VB

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