APTM100AM90FG datasheet(1/6 Pages) MICROSEMI

부품명	APTM100AM90FG

상세설명	Phase leg MOSFET Power Module

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제조업체	MICROSEMI [Microsemi Corporation]

홈페이지	http://www.microsemi.com

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APTM100AM90FG

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VBUS

0/VBUS

Q2

G2

S2

S1

Q1

G1

OUT

VBUS

S1

G1

0/VBUS

G2

S2

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Symbol

Parameter

Max ratings

Unit

VDSS

Drain - Source Breakdown Voltage

1000

V

Tc = 25°C

78

ID

Continuous Drain Current

Tc = 80°C

59

IDM

Pulsed Drain current

312

A

VGS

Gate - Source Voltage

±30

V

RDSon

Drain - Source ON Resistance

105

m

Ω

PD

Maximum Power Dissipation

Tc = 25°C

1250

W

IAR

Avalanche current (repetitive and non repetitive)

25

A

EAR

Repetitive Avalanche Energy

50

EAS

Single Pulse Avalanche Energy

3000

mJ

VDSS = 1000V

RDSon = 90mΩ typ @ Tj = 25°C

ID = 78A @ Tc = 25°C

Application

•

Welding converters

•

Switched Mode Power Supplies

•

Uninterruptible Power Supplies

•

Motor control

Features

•

Power MOS 7® FREDFETs

-

Low RDSon

-

Low input and Miller capacitance

-

Low gate charge

-

Fast intrinsic reverse diode

-

Avalanche energy rated

-

Very rugged

•

Kelvin source for easy drive

•

Very low stray inductance

-

Symmetrical design

-

M5 power connectors

•

High level of integration

Benefits

•

Outstanding performance at high frequency operation

•

Direct mounting to heatsink (isolated package)

•

Low junction to case thermal resistance

•

Low profile

•

RoHS Compliant

Phase leg

MOSFET Power Module

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