| 전자부품 데이터시트 검색엔진 |
|
STP4NK80Z 데이터시트(PDF) 6 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STP4NK80Z 데이터시트(HTML) 6 Page - STMicroelectronics |
|
6 / 18 page ![]() Electrical characteristics STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 6/18 Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 3 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 12 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD= 3 A, VGS=0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 3 A, di/dt = 100A/µs, VDD=80 V, Tj=150°C (see Figure 20) 400 1520 7.6 ns µC A |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |