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APTM120DA29TG 데이터시트(PDF) 2 Page - Microsemi Corporation

부품명 APTM120DA29TG
상세설명  Boost chopper MOSFET Power Module
PDF  6 Pages
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제조업체  MICROSEMI [Microsemi Corporation]
홈페이지  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM120DA29TG 데이터시트(HTML) 2 Page - Microsemi Corporation

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APTM120DA29TG
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 1200V
Tj = 25°C
350
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 1000V
Tj = 125°C
1500
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 17A
290
348
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
10.3
Coss
Output Capacitance
1.54
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.26
nF
Qg
Total gate Charge
374
Qgs
Gate – Source Charge
48
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 34A
240
nC
Td(on)
Turn-on Delay Time
20
Tr
Rise Time
15
Td(off)
Turn-off Delay Time
160
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 34A
RG = 2.5Ω
45
ns
Eon
Turn-on Switching Energy
1980
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 34A, RG = 2.5Ω
1371
µJ
Eon
Turn-on Switching Energy
3131
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 34A, RG = 2.5Ω
1714
µJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
500
µA
IF
DC Forward Current
Tc = 70°C
60
A
IF = 60A
2
2.5
IF = 120A
2.3
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
1.8
V
Tj = 25°C
400
trr
Reverse Recovery Time
Tj = 125°C
470
ns
Tj = 25°C
1200
Qrr
Reverse Recovery Charge
IF = 60A
VR = 800V
di/dt = 200A/µs
Tj = 125°C
4000
nC



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